Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154, 3.90mm Width) |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
Series | HEXFET® |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 8 |
ECCN Code | EAR99 |
Resistance | 50mOhm |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 55V |
Max Power Dissipation | 2W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 4.7A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRF7341PBF |
Number of Elements | 2 |
Row Spacing | 6.3 mm |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Turn On Delay Time | 8.3 ns |
FET Type | 2 N-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 50m Ω @ 4.7A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
Rise Time | 3.2ns |
Fall Time (Typ) | 13 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 4.7A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 5.1A |
Drain to Source Breakdown Voltage | 55V |
Dual Supply Voltage | 55V |
Avalanche Energy Rating (Eas) | 140 mJ |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Recovery Time | 90 ns |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | 1 V |
Height | 1.75mm |
Length | 4.9784mm |
Width | 3.9878mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead, Lead Free |