IRF7342TRPBF
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1999 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 105mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | -55V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -3.4A |
| Base Part Number | IRF7342PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Number of Channels | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 14 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 105m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | -3.4A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -55V |
| Avalanche Energy Rating (Eas) | 114 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 80 ns |
| Max Junction Temperature (Tj) | 150°C |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1 V |
| Height | 1.75mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
See Relate Datesheet
