IRF7451TRPBF
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 90m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 990pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Rise Time | 4.2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 3.6A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain-source On Resistance-Max | 0.09Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Pulsed Drain Current-Max (IDM) | 29A |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Factory Lead Time | 1 Week |
| Radiation Hardening | No |
| Mount | Surface Mount |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Lead Free | Lead Free |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | 150V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 3.6A |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.5W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
See Relate Datesheet
