IRF8313TRPBF
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 15.5MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Base Part Number | IRF8313PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 8.3 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15.5m Ω @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Rise Time | 9.9ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 4.2 ns |
| Turn-Off Delay Time | 8.5 ns |
| Continuous Drain Current (ID) | 9.7A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Avalanche Energy Rating (Eas) | 46 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.8 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
