IRF9910TRPBF
| Parameters | |
|---|---|
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.3m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A 12A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 33 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.55 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 13.4MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 10A |
| Base Part Number | IRF9910PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
See Relate Datesheet
