Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4530pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 83A Tc |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
Drain to Source Voltage (Vdss) | 150V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Turn-Off Delay Time | 24 ns |
Continuous Drain Current (ID) | 83A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 150V |
Dual Supply Voltage | 150V |
Input Capacitance | 4.53nF |
Recovery Time | 110 ns |
Drain to Source Resistance | 15mOhm |
Rds On Max | 15 mΩ |
Nominal Vgs | 30 V |
Height | 16.51mm |
Length | 10.6426mm |
Width | 4.82mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | TO-220AB |
Operating Temperature | -40°C~175°C TJ |
Packaging | Tube |
Published | 2007 |
Series | HEXFET® |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Termination | Through Hole |
Resistance | 15MOhm |
Max Operating Temperature | 175°C |
Min Operating Temperature | -40°C |
Voltage - Rated DC | -150V |
Technology | MOSFET (Metal Oxide) |
Current Rating | -83A |
Number of Elements | 1 |
Power Dissipation-Max | 330W Tc |
Element Configuration | Single |
Power Dissipation | 330W |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |