IRFR18N15DPBF
| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Transistor Application | SWITCHING |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Surface Mount | YES |
| Rds On (Max) @ Id, Vgs | 125m Ω @ 11A, 10V |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Vgs(th) (Max) @ Id | 5.5V @ 250μA |
| Packaging | Tube |
| Published | 2000 |
| Series | HEXFET® |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 25V |
| JESD-609 Code | e3 |
| Current - Continuous Drain (Id) @ 25°C | 18A Tc |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Number of Terminations | 2 |
| Drain to Source Voltage (Vdss) | 150V |
| ECCN Code | EAR99 |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Vgs (Max) | ±30V |
| JEDEC-95 Code | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Drain Current-Max (Abs) (ID) | 18A |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Drain-source On Resistance-Max | 0.125Ohm |
| Peak Reflow Temperature (Cel) | 260 |
| Pulsed Drain Current-Max (IDM) | 72A |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| DS Breakdown Voltage-Min | 150V |
| Avalanche Energy Rating (Eas) | 200 mJ |
| JESD-30 Code | R-PSSO-G2 |
| Qualification Status | Not Qualified |
| RoHS Status | ROHS3 Compliant |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 110W Tc |
See Relate Datesheet
