Parameters | |
---|---|
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2006 |
Series | HEXFET® |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Resistance | 14mOhm |
Voltage - Rated DC | 100V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | 73A |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 190W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 190W |
Case Connection | DRAIN |
Turn On Delay Time | 18 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 14m Ω @ 44A, 10V |
Vgs(th) (Max) @ Id | 4V @ 100μA |
Input Capacitance (Ciss) (Max) @ Vds | 3550pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 73A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Rise Time | 87ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 70 ns |
Turn-Off Delay Time | 53 ns |
Continuous Drain Current (ID) | 73A |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 290A |
Dual Supply Voltage | 100V |
Recovery Time | 53 ns |
Nominal Vgs | 4 V |
Height | 4.826mm |
Length | 10.668mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |