IRFS7530PBF
| Parameters | |
|---|---|
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | HEXFET®, StrongIRFET™ |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 375W |
| Case Connection | DRAIN |
| Turn On Delay Time | 52 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2m Ω @ 100A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 13703pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 195A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 411nC @ 10V |
| Rise Time | 141ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 104 ns |
| Turn-Off Delay Time | 172 ns |
| Continuous Drain Current (ID) | 195A |
| Threshold Voltage | 3.7V |
| Gate to Source Voltage (Vgs) | 3.7V |
| Drain-source On Resistance-Max | 0.002Ohm |
| Drain to Source Breakdown Voltage | 60V |
| Pulsed Drain Current-Max (IDM) | 760A |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 3.949996g |
| Transistor Element Material | SILICON |
See Relate Datesheet
