IRG4BC30FD1
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2003 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Power - Max | 100W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Reverse Recovery Time | 46ns |
| JEDEC-95 Code | TO-220AB |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 31A |
| Turn On Time | 46 ns |
| Test Condition | 480V, 17A, 23 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Turn Off Time-Nom (toff) | 740 ns |
| Gate Charge | 57nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 22ns/250ns |
| Switching Energy | 370μJ (on), 1.42mJ (off) |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
