Parameters | |
---|---|
JEDEC-95 Code | TO-252AA |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 2.6V |
Max Breakdown Voltage | 600V |
Turn On Time | 56 ns |
Test Condition | 480V, 5A, 100 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 5A |
Turn Off Time-Nom (toff) | 345 ns |
Gate Charge | 15nC |
Current - Collector Pulsed (Icm) | 34A |
Td (on/off) @ 25°C | 40ns/87ns |
Switching Energy | 140μJ (on), 120μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Fall Time-Max (tf) | 210ns |
Height | 1.2446mm |
Length | 6.7056mm |
Width | 6.22mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 350.003213mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1999 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Termination | SMD/SMT |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Additional Feature | LOW CONDUCTION LOSS |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 600V |
Max Power Dissipation | 38W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 8.5A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRG4RC10UDPBF |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 38W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 40 ns |
Transistor Application | POWER CONTROL |
Rise Time | 16ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 87 ns |
Collector Emitter Voltage (VCEO) | 2.6V |
Max Collector Current | 8.5A |
Reverse Recovery Time | 28 ns |