Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-274AA |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2004 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Insulated Gate BIP Transistors |
Voltage - Rated DC | 1.2kV |
Max Power Dissipation | 595W |
Current Rating | 80A |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 595W |
Case Connection | COLLECTOR |
Input Type | Standard |
Turn On Delay Time | 99 ns |
Transistor Application | MOTOR CONTROL |
Rise Time | 39ns |
Polarity/Channel Type | N-CHANNEL |
Turn-Off Delay Time | 365 ns |
Collector Emitter Voltage (VCEO) | 3.7V |
Max Collector Current | 80A |
Reverse Recovery Time | 180 ns |
Collector Emitter Breakdown Voltage | 1.2kV |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Collector Emitter Saturation Voltage | 3.39V |
Turn On Time | 115 ns |
Test Condition | 600V, 40A, 4.7 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 50A |
Turn Off Time-Nom (toff) | 357 ns |
IGBT Type | NPT |
Gate Charge | 340nC |
Current - Collector Pulsed (Icm) | 160A |
Switching Energy | 1.4mJ (on), 1.65mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6V |
Height | 20.8mm |
Length | 16.1mm |
Width | 5.3mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |