Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 260.39037mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2009 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Subcategory | Insulated Gate BIP Transistors |
Max Power Dissipation | 250W |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | IRGS4062DPBF |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 250W |
Case Connection | COLLECTOR |
Input Type | Standard |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 1.95V |
Max Collector Current | 48A |
Reverse Recovery Time | 89 ns |
Collector Emitter Breakdown Voltage | 600V |
Collector Emitter Saturation Voltage | 1.6V |
Turn On Time | 64 ns |
Test Condition | 400V, 24A, 10 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 24A |
Turn Off Time-Nom (toff) | 164 ns |
IGBT Type | Trench |
Gate Charge | 50nC |
Current - Collector Pulsed (Icm) | 96A |
Td (on/off) @ 25°C | 41ns/104ns |
Switching Energy | 115μJ (on), 600μJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 6.5V |
Fall Time-Max (tf) | 41ns |
Height | 9.65mm |
Length | 10.668mm |
Width | 4.826mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |