Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | DirectFET™ Isometric L8 |
Number of Pins | 2 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | StrongIRFET™ |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 9 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-XBCC-N9 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 3.8W Ta 341W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.8W |
Case Connection | DRAIN |
Turn On Delay Time | 68 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 0.59m Ω @ 195A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 20082pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 375A Tc |
Gate Charge (Qg) (Max) @ Vgs | 330nC @ 4.5V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 174 ns |
Continuous Drain Current (ID) | 68A |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.00045Ohm |
Drain to Source Breakdown Voltage | 40V |
Avalanche Energy Rating (Eas) | 765 mJ |
Max Junction Temperature (Tj) | 175°C |
Height | 740μm |
Length | 9.15mm |
Width | 7.1mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |