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IRLS4030-7PPBF

MOSFET N-CH 100V 190A D2PAK-7


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-IRLS4030-7PPBF
  • Package: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
  • Datasheet: PDF
  • Stock: 479
  • Description: MOSFET N-CH 100V 190A D2PAK-7 (Kg)

Details

Tags

Parameters
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins 7
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2009
Series HEXFET®
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
ECCN Code EAR99
Resistance 3.9MOhm
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 370W Tc
Element Configuration Single
Power Dissipation 370W
Turn On Delay Time 53 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.9m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11490pF @ 50V
Current - Continuous Drain (Id) @ 25°C 190A Tc
Gate Charge (Qg) (Max) @ Vgs 140nC @ 4.5V
Rise Time 160ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 87 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 190A
Threshold Voltage 2.5V
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 100V
Dual Supply Voltage 100V
Nominal Vgs 2.5 V
Height 4.3434mm
Length 10.3378mm
Width 6.85mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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