Parameters |
Mounting Type |
Surface Mount |
Package / Case |
10-VFDFN Exposed Pad |
Operating Temperature |
0°C~125°C TJ |
Packaging |
Tube |
Published |
2001 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Supply |
7V~13.2V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
ISL6612B |
Pin Count |
10 |
Input Type |
Non-Inverting |
Rise / Fall Time (Typ) |
26ns 18ns |
Interface IC Type |
FULL BRIDGE BASED MOSFET DRIVER |
Channel Type |
Synchronous |
Number of Drivers |
2 |
Driven Configuration |
Half-Bridge |
Gate Type |
N-Channel MOSFET |
Current - Peak Output (Source, Sink) |
1.25A 2A |
High Side Voltage - Max (Bootstrap) |
36V |
RoHS Status |
ROHS3 Compliant |
ISL6612BCRZ Overview
In order to increase flexibility, the package 10-VFDFN Exposed Pad is used.Tube represents the package.Configuration is based on 2 drivers.It's mounted on the way to Surface Mount.By using 7V~13.2V supply voltage, it is able to demonstrate its superiority.A gate type of N-Channel MOSFET is used in its design.Temperature range 0°C~125°C TJ is allowed for this device.A type of Non-Inverting is used for input in this program.The base part number ISL6612B refers to a number of related parts.Mosfet driver employs an interface chip called FULL BRIDGE BASED MOSFET DRIVER as Mosfet drivers interface chip.The board has a total of 10 component pins.High-side voltage - Max (Bootstrap) can be as low as 36V.
ISL6612BCRZ Features
Embedded in the Tube package
2 drivers
Employing a gate type of N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 36V
ISL6612BCRZ Applications
There are a lot of Renesas Electronics America Inc. ISL6612BCRZ gate drivers applications.
- serial peripheral interface (SPI), I2C
- High-voltage isolated DC-DC converters
- Solar power supplies
- Isolated Gate Driver Supplies
- Power factor correction (PFC) circuits
- Motor Control
- Solar inverters
- PCMCIA applications
- Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
- Automotive Applications