Parameters | |
---|---|
Mount | Surface Mount |
Package / Case | SMD/SMT |
Transistor Element Material | SILICON |
Number of Terminations | 9 |
Terminal Finish | Nickel (39) Tin (984) |
Additional Feature | HIGH RELIABILITY, UL RECOGNIZED |
Subcategory | Insulated Gate BIP Transistors |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Pin Count | 9 |
JESD-30 Code | R-PDSO-G9 |
Operating Temperature (Max) | 150°C |
Number of Elements | 2 |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
Power Dissipation-Max | 150W |
Case Connection | ISOLATED |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 2.2V |
Max Collector Current | 43A |
Collector Emitter Breakdown Voltage | 1.2kV |
Turn On Time | 110 ns |
Turn Off Time-Nom (toff) | 350 ns |
NTC Thermistor | No |
Gate-Emitter Voltage-Max | 20V |
RoHS Status | RoHS Compliant |