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IXBH2N250

IGBT 2500V 5A 32W TO247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXBH2N250
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 911
  • Description: IGBT 2500V 5A 32W TO247 (Kg)

Details

Tags

Parameters
Max Power Dissipation 32W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Power - Max 32W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.5V
Max Collector Current 5A
Reverse Recovery Time 920 ns
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 2.5kV
Voltage - Collector Emitter Breakdown (Max) 2500V
Turn On Time 310 ns
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 2A
Turn Off Time-Nom (toff) 252 ns
Gate Charge 10.6nC
Current - Collector Pulsed (Icm) 13A
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5.5V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series BIMOSFET™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
See Relate Datesheet

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