IXGH38N60U1
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| Published | 2012 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 200W |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 200W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 76A |
| Continuous Drain Current (ID) | 38A |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Drain to Source Breakdown Voltage | 600V |
| Turn On Time | 200 ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 38A |
| Turn Off Time-Nom (toff) | 1800 ns |
| Fall Time-Max (tf) | 1100ns |
| RoHS Status | RoHS Compliant |
See Relate Datesheet
