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IXGH72N60A3

IGBT 600V 75A 540W TO247


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGH72N60A3
  • Package: TO-247-3
  • Datasheet: PDF
  • Stock: 216
  • Description: IGBT 600V 75A 540W TO247 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.500007g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series GenX3™, XPT™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 540W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*72N60
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 540W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 31 ns
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 320 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 75A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.35V
Input Capacitance 6.6nF
Turn On Time 61 ns
Test Condition 480V, 50A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 60A
Turn Off Time-Nom (toff) 885 ns
IGBT Type PT
Gate Charge 230nC
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 31ns/320ns
Switching Energy 1.38mJ (on), 3.5mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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