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IXGK82N120B3

IGBT 1200V 230A 1250W TO264


  • Manufacturer: IXYS
  • Nocochips NO: 401-IXGK82N120B3
  • Package: TO-264-3, TO-264AA
  • Datasheet: PDF
  • Stock: 130
  • Description: IGBT 1200V 230A 1250W TO264 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2009
Series GenX3™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.25kW
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Input Type Standard
Power - Max 1250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.2V
Max Collector Current 230A
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 112 ns
Test Condition 600V, 80A, 2 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.2V @ 15V, 82A
Turn Off Time-Nom (toff) 760 ns
IGBT Type PT
Gate Charge 350nC
Current - Collector Pulsed (Icm) 500A
Td (on/off) @ 25°C 30ns/210ns
Switching Energy 5mJ (on), 3.3mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 180ns
RoHS Status ROHS3 Compliant
See Relate Datesheet

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