Parameters | |
---|---|
Series | XPT™, GenX3™ |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 2 |
Number of Terminations | 2 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Insulated Gate BIP Transistors |
Terminal Form | GULL WING |
Pin Count | 4 |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Element Configuration | Single |
Case Connection | COLLECTOR |
Input Type | Standard |
Power - Max | 600W |
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Collector Emitter Voltage (VCEO) | 600V |
Max Collector Current | 120A |
Reverse Recovery Time | 40ns |
Power Dissipation-Max (Abs) | 600W |
Turn On Time | 75 ns |
Test Condition | 360V, 36A, 5 Ω, 15V |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 36A |
Turn Off Time-Nom (toff) | 320 ns |
Gate Charge | 70nC |
Current - Collector Pulsed (Icm) | 200A |
Td (on/off) @ 25°C | 27ns/150ns |
Switching Energy | 670μJ (on), 1.2mJ (off) |
Gate-Emitter Voltage-Max | 20V |
Gate-Emitter Thr Voltage-Max | 5.5V |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |