J112G
| Parameters | |
|---|---|
| Width | 6.35mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~150°C TJ |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| HTS Code | 8541.21.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 35V |
| Max Power Dissipation | 350mW |
| Terminal Position | BOTTOM |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 50mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | J112 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| FET Type | N-Channel |
| Transistor Application | CHOPPER |
| Breakdown Voltage | -35V |
| Drain to Source Voltage (Vdss) | 35V |
| Gate to Source Voltage (Vgs) | -35V |
| Drain-source On Resistance-Max | 50Ohm |
| FET Technology | JUNCTION |
| Feedback Cap-Max (Crss) | 5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5mA @ 15V |
| Voltage - Cutoff (VGS off) @ Id | 1V @ 1μA |
| Resistance - RDS(On) | 50Ohm |
| Height | 6.35mm |
| Length | 19.05mm |
See Relate Datesheet
