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JANTX1N6621U

DIODE GEN PURP 400V 1.2A A-MELF


  • Manufacturer: Microsemi Corporation
  • Nocochips NO: 523-JANTX1N6621U
  • Package: SQ-MELF, A
  • Datasheet: PDF
  • Stock: 345
  • Description: DIODE GEN PURP 400V 1.2A A-MELF (Kg)

Details

Tags

Parameters
Current - Reverse Leakage @ Vr 500nA @ 400V
Voltage - Forward (Vf) (Max) @ If 1.4V @ 1.2A
Case Connection ISOLATED
Forward Current 1.2A
Operating Temperature - Junction -65°C~150°C
Application ULTRA FAST RECOVERY
Voltage - DC Reverse (Vr) (Max) 400V
Number of Phases 1
Reverse Recovery Time 30ns
Peak Reverse Current 500nA
Max Repetitive Reverse Voltage (Vrrm) 440V
Rep Pk Reverse Voltage-Max 400V
Peak Non-Repetitive Surge Current 20A
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Lifecycle Status IN PRODUCTION (Last Updated: 3 weeks ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, A
Number of Pins 2
Diode Element Material SILICON
Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/585
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Terminal Position END
Terminal Form WRAP AROUND
Pin Count 2
Reference Standard MIL
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
See Relate Datesheet

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