Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Lead, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-72-3 Metal Can |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~200°C TJ |
Packaging | Bulk |
Published | 2007 |
Series | Military, MIL-PRF-19500/343 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Max Power Dissipation | 200mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Frequency | 1.6GHz |
Qualification Status | Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 200mW |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 15V |
Max Collector Current | 40mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA 1V |
Gain | 12.5dB ~ 21dB @ 450MHz |
Frequency - Transition | 500MHz |
Collector Base Voltage (VCBO) | 30V |
Emitter Base Voltage (VEBO) | 3V |
Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
Radiation Hardening | No |
RoHS Status | Non-RoHS Compliant |