Parameters | |
---|---|
Case Connection | GATE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Breakdown Voltage | -25V |
Drain to Source Voltage (Vdss) | 25V |
Continuous Drain Current (ID) | 500mA |
Gate to Source Voltage (Vgs) | -25V |
FET Technology | JUNCTION |
Drain to Source Resistance | 3Ohm |
Feedback Cap-Max (Crss) | 35 pF |
Current - Drain (Idss) @ Vds (Vgs=0) | 500mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 4.5V @ 1μA |
Resistance - RDS(On) | 3Ohm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Voltage - Rated DC | 25V |
Max Power Dissipation | 1W |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 500mA |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | DEPLETION MODE |
Power Dissipation | 1W |