LM74610QDGKTQ1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -40°C~125°C |
| Packaging | Tape & Reel (TR) |
| Series | Automotive, AEC-Q100 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| Type | N+1 ORing Controller |
| Applications | General Purpose |
| Voltage - Supply | 42V Max |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Functions | 1 |
| Terminal Pitch | 0.65mm |
| Base Part Number | LM74610 |
| Number of Outputs | 1 |
| Number of Channels | 1 |
| Adjustable Threshold | NO |
| Quiescent Current | 0A |
| FET Type | N-Channel |
| Threshold Voltage | 6.3 |
| Ratio - Input:Output | N:1 |
| Internal Switch(s) | No |
| Height | 1.07mm |
| Length | 3mm |
| Width | 3mm |
| Thickness | 970μm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
LM74610QDGKTQ1 Description
The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero lq.
The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive IS07637 transient requirements with a suitable TVS diode.
LM74610QDGKTQ1 Features
Qualified for Automotive Applications
Maximum reverse voltage of 45 V
No Positive Voltage limitation to Anode terminal
Charge Pump Gate Driver for external N-Channel MOSFET
Lower Power Dissipation than Schottky Diode/PFET solutions
Low reverse leakage current
Zero IQ
Fast 2 μs Response to Reverse Polarity
-40 °C to 125 °C Operating Ambient Temperature
Can be used in OR-ing Applications
Meets CISPR25 EMI Specification
Meets Automotive IS07637 Transient Requirements with a suitable TVS Diode
LM74610QDGKTQ1 Applications
ADAS
Infotainment Systems
Power Tools (Industrial)
Transmission Control Unit (TCU)
Battery OR-ing Applications
