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MJD3055T4

MJD3055T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MJD3055T4
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 430
  • Description: MJD3055T4 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Lifecycle Status OBSOLETE (Last Updated: 6 days ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
HTS Code 8541.29.00.95
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 10A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number MJD3055
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 20W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 2MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 8V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 4A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.1V @ 400mA, 4A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 2MHz
Collector Emitter Saturation Voltage 1.1V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 5V
hFE Min 20
REACH SVHC No SVHC
RoHS Status Non-RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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