Parameters | |
---|---|
Voltage - Rated DC | 25V |
Max Power Dissipation | 225mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 10mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 225mW |
Transistor Application | AMPLIFIER |
Drain to Source Voltage (Vdss) | 25V |
Polarity/Channel Type | N-CHANNEL |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 25V |
Input Capacitance | 5pF |
FET Technology | JUNCTION |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
Package / Case | SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Packaging | Cut Tape (CT) |
Published | 2010 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Max Operating Temperature | 150°C |
Subcategory | Other Transistors |