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MMBFU310LT1G

MMBFU310LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-MMBFU310LT1G
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 814
  • Description: MMBFU310LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Highest Frequency Band ULTRA HIGH FREQUENCY B
Current - Drain (Idss) @ Vds (Vgs=0) 24mA @ 10V
Voltage - Cutoff (VGS off) @ Id 2.5V @ 1nA
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 10mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFU310
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 225mW
FET Type N-Channel
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 5pF @ 10V VGS
Breakdown Voltage -25V
Continuous Drain Current (ID) 60mA
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 25V
FET Technology JUNCTION
Feedback Cap-Max (Crss) 2.5 pF
See Relate Datesheet

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