Parameters | |
---|---|
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Current - Drain (Idss) @ Vds (Vgs=0) | 24mA @ 10V |
Voltage - Cutoff (VGS off) @ Id | 2.5V @ 1nA |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Surface Mount | YES |
Number of Pins | 3 |
Weight | 1.437803g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 25V |
Max Power Dissipation | 225mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 10mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MBFU310 |
Pin Count | 3 |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
Power Dissipation | 225mW |
FET Type | N-Channel |
Transistor Application | AMPLIFIER |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V VGS |
Breakdown Voltage | -25V |
Continuous Drain Current (ID) | 60mA |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | 25V |
FET Technology | JUNCTION |
Feedback Cap-Max (Crss) | 2.5 pF |