Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Number of Pins | 6 |
Weight | 3.005049mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Terminal Finish | Matte Tin (Sn) |
Subcategory | Other Transistors |
Voltage - Rated DC | 40V |
Max Power Dissipation | 150mW |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 600mA |
Frequency | 300MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | MMDT2222V |
Pin Count | 6 |
Number of Elements | 2 |
Polarity | NPN |
Element Configuration | Dual |
Power Dissipation | 150mW |
Gain Bandwidth Product | 300MHz |
Transistor Type | 2 NPN (Dual) |
Collector Emitter Voltage (VCEO) | 40V |
Max Collector Current | 600mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA 10V |
Current - Collector Cutoff (Max) | 10nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
Collector Emitter Breakdown Voltage | 40V |
Transition Frequency | 300MHz |
Collector Emitter Saturation Voltage | 1V |
Max Breakdown Voltage | 40V |
Collector Base Voltage (VCBO) | 75V |
Emitter Base Voltage (VEBO) | 6V |
hFE Min | 35 |
Height | 600μm |
Length | 1.6mm |
Width | 1.2mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |