MMIX4B20N300
| Parameters | |
|---|---|
| Configuration | Full Bridge |
| Case Connection | ISOLATED |
| Power - Max | 150W |
| Transistor Application | POWER CONTROL |
| Polarity/Channel Type | N-CHANNEL |
| Input | Standard |
| Collector Emitter Voltage (VCEO) | 3.2V |
| Max Collector Current | 34A |
| Collector Emitter Breakdown Voltage | 3kV |
| Voltage - Collector Emitter Breakdown (Max) | 3000V |
| Turn On Time | 608 ns |
| Vce(on) (Max) @ Vge, Ic | 3.2V @ 15V, 20A |
| Turn Off Time-Nom (toff) | 695 ns |
| NTC Thermistor | No |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 24-SMD Module, 9 Leads |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Published | 2012 |
| Series | BIMOSFET™ |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 9 |
| Max Power Dissipation | 150W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PDSO-G9 |
| Number of Elements | 4 |
See Relate Datesheet
