Parameters | |
---|---|
Drain to Source Breakdown Voltage | 30V |
FET Technology | JUNCTION |
Current - Drain (Idss) @ Vds (Vgs=0) | 25mA @ 15V |
Voltage - Cutoff (VGS off) @ Id | 2V @ 10nA |
Resistance - RDS(On) | 60Ohm |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | OBSOLETE (Last Updated: 2 weeks ago) |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -65°C~150°C TJ |
Packaging | Bulk |
Published | 2009 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
HTS Code | 8541.21.00.95 |
Subcategory | Other Transistors |
Voltage - Rated DC | 30V |
Max Power Dissipation | 350mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 50mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Operating Mode | DEPLETION MODE |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 15V VGS |
Gate to Source Voltage (Vgs) | 30V |
Drain-source On Resistance-Max | 60Ohm |