Parameters | |
---|---|
Transistor Application | AMPLIFIER |
Polarity/Channel Type | PNP |
Transistor Type | PNP |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 1A 1V |
Current - Collector Cutoff (Max) | 100nA ICBO |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Current - Collector (Ic) (Max) | 1A |
RoHS Status | Non-RoHS Compliant |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Long Body |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | TIN LEAD |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
JESD-30 Code | O-PBCY-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 1W |