Parameters | |
---|---|
Lifecycle Status | OBSOLETE (Last Updated: 5 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2006 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
HTS Code | 8541.21.00.75 |
Subcategory | Other Transistors |
Voltage - Rated DC | 15V |
Max Power Dissipation | 350mW |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | 5mA |
Time@Peak Reflow Temperature-Max (s) | 30 |
Base Part Number | MPSH17 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 800MHz |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 15V |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 5mA 10V |
Collector Emitter Breakdown Voltage | 15V |
Gain | 24dB |
Transition Frequency | 800MHz |
Collector Emitter Saturation Voltage | 500mV |
Max Breakdown Voltage | 15V |
Collector Base Voltage (VCBO) | 20V |
Emitter Base Voltage (VEBO) | 3V |
hFE Min | 25 |
Highest Frequency Band | VERY HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 0.9pF |
Noise Figure (dB Typ @ f) | 6dB @ 200MHz |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |