Parameters | |
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Published | 2004 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | TIN LEAD |
Max Power Dissipation | 200mW |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE |
Power - Max | 200mW |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 15V |
Max Collector Current | 30mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA 5V |
Collector Emitter Breakdown Voltage | 15V |
Gain | 6.5dB ~ 10.5dB |
Transition Frequency | 4000MHz |
Frequency - Transition | 4GHz |
Collector Base Voltage (VCBO) | 25V |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 1.5pF |
Noise Figure (dB Typ @ f) | 1.5dB @ 450MHz |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-206AF, TO-72-4 Metal Can |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |