Parameters | |
---|---|
Package / Case | M115 |
Number of Pins | 4 |
Transistor Element Material | SILICON |
Operating Temperature | 200°C TJ |
Packaging | Bulk |
Published | 2004 |
JESD-609 Code | e0 |
Pbfree Code | no |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
Terminal Finish | TIN LEAD |
Additional Feature | HIGH RELIABILITY |
Subcategory | Other Transistors |
Max Power Dissipation | 10W |
Terminal Position | RADIAL |
Terminal Form | FLAT |
Pin Count | 4 |
Number of Elements | 1 |
Configuration | SINGLE |
Case Connection | BASE |
Output Power | 2W |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Max Collector Current | 250mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA 5V |
Collector Emitter Breakdown Voltage | 3.5V |
Gain | 9dB |
Current - Collector (Ic) (Max) | 250mA |
Max Frequency | 1.15GHz |
Frequency - Transition | 1.025GHz~1.15GHz |
Collector Base Voltage (VCBO) | 45V |
Highest Frequency Band | L B |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Chassis Mount, Surface Mount |
Mounting Type | Chassis Mount |