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MT16HTF51264HZ-800C1

DRAM Module DDR2 SDRAM 4Gbyte 200SODIMM Tray


  • Manufacturer: Micron Technology Inc.
  • Nocochips NO: 533-MT16HTF51264HZ-800C1
  • Package: 200-SODIMM
  • Datasheet: PDF
  • Stock: 597
  • Description: DRAM Module DDR2 SDRAM 4Gbyte 200SODIMM Tray (Kg)

Details

Tags

Parameters
Memory Density 34359738368 bit
Max Frequency 800MHz
Access Time (Max) 0.4 ns
I/O Type COMMON
Refresh Cycles 8192
Access Mode DUAL BANK PAGE BURST
Height Seated (Max) 30.15mm
Length 67.6mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Contact Plating Gold
Mount Socket
Package / Case 200-SODIMM
Number of Pins 200
Published 2010
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 200
ECCN Code EAR99
Max Operating Temperature 70°C
Min Operating Temperature 0°C
Additional Feature AUTO/SELF REFRESH; WD-MAX
HTS Code 8542.32.00.36
Subcategory DRAMs
Technology CMOS
Terminal Position ZIG-ZAG
Peak Reflow Temperature (Cel) 260
Number of Functions 1
Supply Voltage 1.8V
Terminal Pitch 0.6mm
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 200
Operating Supply Voltage 1.8V
Number of Elements 16
Temperature Grade COMMERCIAL
Max Supply Voltage 1.9V
Min Supply Voltage 1.7V
Memory Size 4GB
Number of Ports 1
Speed 800MT/s
Memory Type DDR2 SDRAM
Clock Frequency 400MHz
Data Bus Width 64b
Organization 512MX64
Output Characteristics 3-STATE
Memory Width 64
See Relate Datesheet

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