Parameters | |
---|---|
Memory Density | 34359738368 bit |
Max Frequency | 800MHz |
Access Time (Max) | 0.4 ns |
I/O Type | COMMON |
Refresh Cycles | 8192 |
Access Mode | DUAL BANK PAGE BURST |
Height Seated (Max) | 30.15mm |
Length | 67.6mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Gold |
Mount | Socket |
Package / Case | 200-SODIMM |
Number of Pins | 200 |
Published | 2010 |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 200 |
ECCN Code | EAR99 |
Max Operating Temperature | 70°C |
Min Operating Temperature | 0°C |
Additional Feature | AUTO/SELF REFRESH; WD-MAX |
HTS Code | 8542.32.00.36 |
Subcategory | DRAMs |
Technology | CMOS |
Terminal Position | ZIG-ZAG |
Peak Reflow Temperature (Cel) | 260 |
Number of Functions | 1 |
Supply Voltage | 1.8V |
Terminal Pitch | 0.6mm |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 200 |
Operating Supply Voltage | 1.8V |
Number of Elements | 16 |
Temperature Grade | COMMERCIAL |
Max Supply Voltage | 1.9V |
Min Supply Voltage | 1.7V |
Memory Size | 4GB |
Number of Ports | 1 |
Speed | 800MT/s |
Memory Type | DDR2 SDRAM |
Clock Frequency | 400MHz |
Data Bus Width | 64b |
Organization | 512MX64 |
Output Characteristics | 3-STATE |
Memory Width | 64 |