MUR8100EG
| Parameters | |
|---|---|
| Number of Elements | 1 |
| Element Configuration | Single |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Diode Type | Standard |
| Current - Reverse Leakage @ Vr | 25μA @ 1000V |
| Output Current | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 8A |
| Case Connection | CATHODE |
| Forward Current | 8A |
| Operating Temperature - Junction | -65°C~175°C |
| Max Surge Current | 100A |
| Application | ULTRA FAST RECOVERY POWER |
| Voltage - DC Reverse (Vr) (Max) | 1000V |
| Breakdown Voltage | 1kV |
| Forward Voltage | 1.8V |
| Max Reverse Voltage (DC) | 1kV |
| Average Rectified Current | 8A |
| Number of Phases | 1 |
| Reverse Recovery Time | 100 ns |
| Peak Reverse Current | 25μA |
| Max Repetitive Reverse Voltage (Vrrm) | 1kV |
| Peak Non-Repetitive Surge Current | 100A |
| Reverse Voltage | 1kV |
| Max Forward Surge Current (Ifsm) | 100A |
| Recovery Time | 100 ns |
| Height | 9.27mm |
| Length | 10.29mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Surface Mount | NO |
| Number of Pins | 2 |
| Weight | 4.535924g |
| Diode Element Material | SILICON |
| Packaging | Tube |
| Published | 1999 |
| Series | SWITCHMODE™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Additional Feature | FREE WHEELING DIODE |
| HTS Code | 8541.10.00.80 |
| Subcategory | Rectifier Diodes |
| Voltage - Rated DC | 1kV |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 8A |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MUR8100 |
| Pin Count | 2 |
See Relate Datesheet
