MW6S010GNR1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | TO-270BA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2009 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Voltage - Rated | 68V |
| HTS Code | 8541.29.00.75 |
| Subcategory | FET General Purpose Power |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Reach Compliance Code | not_compliant |
| Frequency | 960MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MW6S010 |
| JESD-30 Code | R-PDSO-G2 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 225°C |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 125mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS |
| Gain | 18dB |
| DS Breakdown Voltage-Min | 68V |
| Power - Output | 10W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 61.4W |
| Voltage - Test | 28V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
