Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Number of Pins | 6 |
Weight | 36mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | PowerTrench® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Resistance | 5Ohm |
Subcategory | Other Transistors |
Voltage - Rated DC | -50V |
Max Power Dissipation | 960mW |
Terminal Form | GULL WING |
Current Rating | -220mA |
Number of Elements | 2 |
Number of Channels | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 960mW |
Turn On Delay Time | 3.2 ns |
Power - Max | 700mW |
FET Type | 2 P-Channel (Dual) |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5 Ω @ 340mA, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 66pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 340mA |
Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 10V |
Rise Time | 10ns |
Fall Time (Typ) | 10 ns |
Turn-Off Delay Time | 8 ns |
Continuous Drain Current (ID) | -340mA |
Threshold Voltage | -1V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.34A |
Drain to Source Breakdown Voltage | -60V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Max Junction Temperature (Tj) | 150°C |
FET Feature | Logic Level Gate |
Nominal Vgs | -1.9 V |
Min Breakdown Voltage | 60V |
Height | 1.1mm |
Length | 3mm |
Width | 1.7mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |