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NDD03N50ZT4G

MOSFET,N CH,W DIODE,500V,2.6A,DPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NDD03N50ZT4G
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 289
  • Description: MOSFET,N CH,W DIODE,500V,2.6A,DPAK (Kg)

Details

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Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 3.3Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Pin Count 4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 58W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 58W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.3 Ω @ 1.15A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 329pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Rise Time 7ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 2.6A
Gate to Source Voltage (Vgs) 30V
DS Breakdown Voltage-Min 500V
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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