NSBA123JDXV6T1G
| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Terminal Finish | TIN |
| Additional Feature | BUILT IN BIAS RESISTOR RATIO IS 0.047 |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-F6 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| Power - Max | 500mW |
| Polarity/Channel Type | PNP |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA 10V |
| Current - Collector Cutoff (Max) | 500nA |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300μA, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 2.2k Ω |
| Resistor - Emitter Base (R2) | 47k Ω |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
