NSV60101DMTWTBG
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-WDFN Exposed Pad |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Power Dissipation | 2.27W |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| JESD-30 Code | S-PDSO-N6 |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Case Connection | COLLECTOR |
| Power - Max | 2.27W |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | 2 NPN (Dual) |
| Collector Emitter Voltage (VCEO) | 180mV |
| Max Collector Current | 1A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA 2V |
| Current - Collector Cutoff (Max) | 100nA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 100mA, 1A |
| Collector Emitter Breakdown Voltage | 60V |
| Transition Frequency | 180MHz |
| Frequency - Transition | 180MHz |
| VCEsat-Max | 0.2 V |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
