NTLGD3502NT2G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | LIFETIME (Last Updated: 1 day ago) |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Resistance | 60MOhm |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 1.74W |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTLGD3502N |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.74W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 60m Ω @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A 3.6A |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Rise Time | 17.5ns |
| Fall Time (Typ) | 17.5 ns |
| Turn-Off Delay Time | 8.6 ns |
| Continuous Drain Current (ID) | 5.8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 4.3A |
| Drain to Source Breakdown Voltage | 20V |
| Pulsed Drain Current-Max (IDM) | 17.2A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
