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NTMFS4825NFET1G

MOSFET NFETFL 30V 171A 2mOHM


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-NTMFS4825NFET1G
  • Package: 8-PowerTDFN, 5 Leads
  • Datasheet: PDF
  • Stock: 597
  • Description: MOSFET NFETFL 30V 171A 2mOHM (Kg)

Details

Tags

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN, 5 Leads
Surface Mount YES
Number of Pins 5
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 5
Number of Elements 1
Power Dissipation-Max 950mW Ta 96.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.74W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5660pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17A Ta 171A Tc
Gate Charge (Qg) (Max) @ Vgs 40.2nC @ 4.5V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 171A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.002Ohm
Drain to Source Breakdown Voltage 30V
Height 1.1mm
Length 5.1mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
See Relate Datesheet

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