Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2006 |
JESD-609 Code | e0 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin/Lead (Sn/Pb) |
Subcategory | Other Transistors |
Voltage - Rated DC | -60V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 240 |
Reach Compliance Code | not_compliant |
Current Rating | -12A |
Time@Peak Reflow Temperature-Max (s) | 30 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 2.4W Ta 62.5W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.4W |
Case Connection | DRAIN |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 196m Ω @ 12A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 2.4A Ta |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 41ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 45 ns |
Turn-Off Delay Time | 27 ns |
Continuous Drain Current (ID) | 2.4A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 20V |
Drain-source On Resistance-Max | 0.196Ohm |
Drain to Source Breakdown Voltage | -60V |
Pulsed Drain Current-Max (IDM) | 42A |
Avalanche Energy Rating (Eas) | 216 mJ |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Surface Mount | NO |
Number of Pins | 3 |