Parameters | |
---|---|
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Contact Plating | Tin |
Mounting Type | Surface Mount |
Package / Case | SOT-963 |
Surface Mount | YES |
Number of Pins | 6 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2005 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Max Power Dissipation | 710mW |
Terminal Form | FLAT |
Base Part Number | NTUD3169CZ |
Pin Count | 6 |
Number of Elements | 2 |
Element Configuration | Dual |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 200mW |
Turn On Delay Time | 26 ns |
Power - Max | 125mW |
FET Type | N and P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.5 Ω @ 100mA, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 12.5pF @ 15V |
Current - Continuous Drain (Id) @ 25°C | 220mA 200mA |
Rise Time | 46ns |
Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Fall Time (Typ) | 145 ns |
Turn-Off Delay Time | 196 ns |
Continuous Drain Current (ID) | 280mA |
Threshold Voltage | 1V |
Gate to Source Voltage (Vgs) | 8V |
Drain to Source Breakdown Voltage | 20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
FET Feature | Logic Level Gate |
Height | 400μm |
Length | 1.05mm |
Width | 850μm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |