NTZD3155CT1G
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Surface Mount | YES |
| Number of Pins | 6 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 500mOhm |
| Subcategory | Other Transistors |
| Max Power Dissipation | 250mW |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 540mA |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | NTZD3155C |
| Pin Count | 6 |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 250mW |
| Turn On Delay Time | 10 ns |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 550m Ω @ 540mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 16V |
| Current - Continuous Drain (Id) @ 25°C | 540mA 430mA |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 4.5V |
| Rise Time | 12ns |
| Drain to Source Voltage (Vdss) | 20V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 540mA |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 6V |
| Drain Current-Max (Abs) (ID) | 0.54A |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 600μm |
| Length | 1.7mm |
| Width | 1.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
