NUS5531MTR2G
| Parameters | |
|---|---|
| Lifecycle Status | OBSOLETE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Number of Pins | 8 |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Applications | General Purpose |
| Voltage - Rated | 20V PNP 12V P-Channel |
| Subcategory | Other Transistors |
| Current Rating (Amps) | 2A PNP 5.47A P-Channel |
| Terminal Position | DUAL |
| Current Rating | 5.47A |
| Pin Count | 8 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.46W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| Transistor Application | SWITCHING |
| Rise Time | 17.5ns |
| Fall Time (Typ) | 17.5 ns |
| Transistor Type | PNP, P-Channel |
| Turn-Off Delay Time | 80 ns |
| Continuous Drain Current (ID) | 5.47A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Collector Current-Max (IC) | 2A |
| DC Current Gain-Min (hFE) | 150 |
| Drain to Source Resistance | 32mOhm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
